IGBT参数测试IEC标准一-术语和定义

3 IGBT术语和定义
3.1 IGBT图形符号
标准IEC 60747-9所用IGBT图形符号如下图所示： Graphical symbol
NOTE：Only the graphical symbol for N-channel IGBT is used in this standard. It equally applies for the measurement of P-channel devices. In the case of P-channel devices polarity must be adapted.文章来源：http://www.igbt8.com/jc/147.html
3.2 一般用语
3.2.1 绝缘栅双极晶体管 IGBT
Transistor has a conduction channel and a PN junction. The current flowing through the channel and the junction is controlled by an electric field resulting from a voltage applied between the gate and emitter terminals.
NOTE：With collector-emitter voltage applied, the PN junction is forward biased.
3.2.2
N-channel IGBT：N沟道IGBT
IGBT that has one or more N-type conduction channels
3.2.3
P-channel IGBT：P沟道IGBT
IGBT that has one or more P-type conduction channels
3.2.4
collector current (of an IGBT)：IGBT直流电流
Ic
Direct current that is switched (controlled) by the IGBT.
3.2.5
collector terminal, collector (of an IGBT)：IGBT集电极
C
For an N-channel (a P-channel) IGBT, the terminal to (from) which the collector current flows from (to) the external circuit.
3.2.6
emitter terminal, emitter (of an IGBT)：IGBT发射极
E
For an N-channel (a P-channel) IGBT, the terminal from (to) which the collector current flows to (from) the external circuit.
3.2.7
gate terminal, gate (of an IGBT)：IGBT门极
G
Terminal to which a voltage is applied against the emitter terminal in order to control the collector current.
3.3 IGBT额定值和特性相关术语；IGBT静态参数电压和电流
3.3.1
collector-emitter (d.c.) voltage：集电极-发射极电压
Voltage between collector and emitter
3.3.2
collector-emitter voltage with gate-emitter short-circuited：门极短路条件下集电极-发射极电压
VCES
Collector-emitter voltage at which the collector current has a specified low (absolute) value with gate-emitter short-circuited.
3.3.3
collector-emitter sustaining voltage：集电极-发射极维持电压
VCE*sus
Collector-emitter breakdown voltage at relatively high values of collector current where the breakdown voltage is relatively insensitive to changes in collector current, for a specified termination between gate and emitter terminals
3.3.4
collector-emitter breakdown voltage：集电极-发射极击穿电压
V(BR)CES
Voltage between collector and emitter above which the collector current rises steeply, with gate to emitter short-circuited
3.3.5
collector-emitter saturation voltage：集电极-发射极饱和电压
VCEsat
Collector-emitter voltage under conditions of gate-emitter voltage at which the collector current is essentially independent of the gate-emitter voltage
3.3.6
gate-emitter (d.c.) voltage：门极-发射极（直流）电压
Voltage between gate and emitter
3.3.7
gate-collector (d.c.) voltage：门极-集电极（直流）电压
Voltage between gate and collector
3.3.8
gate-emitter threshold voltage：门极-发射极阈值电压
VGE(th)
Gate-emitter voltage at which the collector current has a specified low (absolute) value
3.3.9
electrostatic discharge voltage：静电放电电压
Voltage that can be applied to the gate terminal without destruction of the isolation layer 3.3.10
collector cut-off current：集电极截止电流
Collector current at a specific collector-emitter voltage below the breakdown region and gate off-state
3.3.11
collector current：集电极电流
Current through collector
3.3.12
tail current：拖尾电流
ICZ
Collector current during the tail time
3.3.13
gate leakage current：门极漏电流
IGES
Leakage current into the gate terminal at a specified gate-emitter voltage with the collector terminal short-circuited to the emitter terminal 3.3.14
Safe operating area：安全工作区
SOA
Collector current versus collector emitter voltage where the IGBT is able to turn-on and turnoff without failure
3.3.14.1
forward bias safe operating area：正偏安全工作区
FBSOA
Collector current versus collector emitter voltage where the IGBT is able to turn-on and is able to be on-state without failure
3.3.14.2
reverse bias safe operating area：反偏安全工作区
RBSOA
Collector current versus collector emitter voltage where the IGBT is able to turn-off without failure
3.3.14.3
short circuit safe operating area：短路安全工作区
SCSOA
Short circuit duration and collector emitter voltage where the IGBT is able to turn-on and turnoff without failure