IGBT参数测试IEC标准二-额定参数及特性

5 IGBT额定参数及特性
5.1 Ratings (limiting values)：额定（限值）
Ratings shall be valid for the whole range of operating conditions as stated for the particular device, with reference to a curve where appropriate.
5.1.1 Ambient or case or virtual junction operating temperature (Ta or Tc or Tvj)：
环境、外壳及结点实际运行温度
Maximum and minimum values
5.1.2 Storage temperature (Tstg)：储存温度
Maximum and minimum values
5.1.3 Collector-emitter voltage with gate-emitter short-circuited (VCES)：门极-发射极短路条件下集电极-发射极电压
Maximum value
NOTE：This rating should not be less than V(BR)CES.
5.1.4 Gate-emitter voltages with collector emitter short circuit (VGES)：集电极-发射极短路条件先门极-发射极电压
Maximum positive and negative values
5.1.5 Continuous collector current (IC)：集电极连续电流
Maximum value.
5.1.6 Repetitive peak collector current (ICRM)：可重复集电极峰值电流
Maximum value for rectangular pulses with specified pulse duration and duty cycle
5.1.7 Non-repetitive peak collector current (ICSM)：非重复集电极峰值电流
Maximum value for a rectangular pulse with specified pulse duration.文章来源：http://www.igbt8.com/jc/148.html
5.1.8 Total power dissipation (Ptot)：总功耗
Maximum value with a derating curve where appropriate.
5.1.9 Maximum safe operating area：最大安全工作区
Diagram showing the maximum rated collector current Ic after turn-on, which may not be exceeded, even under best cooling conditions, as a function of the collector-emitter voltage VCE before and during turn-on for direct current and various pulse durations at 25 °C case temperature.
5.1.10 Maximum reverse biased safe operating area (RBSOA)：最大反偏安全工作区
Diagram showing the area of collector current IC and collector-emitter voltage VCE which the IGBTs will sustain simultaneously for a short period of time during turn-off without failure under the specified conditions
5.1.11 Maximum short circuit safe operating area (SCSOA)：短路安全工作区
SCSOA is given by a pair of values of short-circuit duration tpsc and collector-emitter voltage VCE which may not be exceeded under the load short-circuit conditions. The device may be turned on and turned off again for shorting a voltage source without failure
5.1.12 Maximum terminal current (ItRMS) (where appropriate)：最大端子电流有效值（如适用）
Maximum r.m.s. value of the current through the main terminal.
5.1.13 Mounting force (F)：安装力
Maximum and minimum values, where appropriate
5.1.14 Mounting torque (M)：安装扭矩
Maximum and minimum values, where appropriate
5.2 Characteristics：IGBT参数特性
Characteristics shall be given at Tvj = 25 °C except where otherwise stated; and at one other specified temperature.
5.2.1 Collector-emitter breakdown voltage (V(BR)CES)：集电极-发射极击穿电压
Minimum value with gate-emitter short-circuited and at specified collector current.
5.2.2 Collector-emitter sustaining voltage (VCE*sus)：集电极-发射极维持电压
Where appropriate, minimum value at specified collector current and gate conditions
5.2.3 Collector-emitter saturation voltage (VCEsat)：集电极-发射极饱和电压
Maximum value at specified gate voltage and collector current
5.2.4 Gate-emitter threshold voltage (VGE(th))：门极-发射极阈值电压
Minimum and maximum values at specified collector-emitter voltage and collector current
5.2.5 Collector-emitter cut-off current (ICE*)：集电极-发射极截止电流
Maximum value at specified high collector-emitter voltage and for a specified termination between gate and emitter terminals
5.2.6 Gate leakage current (lGES)：门极-发射极漏电流
Maximum value at the maximum rated gate-emitter voltage
5.2.7 Capacitances：电容
Typical values of the following, at specified collector-emitter voltage and test frequency.
5.2.7.1 Input capacitance (Cies)：输入电容
Typical input capacitance as small-signal value, in common-emitter configuration, under specified bias conditions and at a specified frequency, with the output short-circuited to a.c.
5.2.7.2 Output capacitance (Coes)：输出电容
Typical output capacitance as small-signal value, in common-emitter configuration, under specified bias conditions and at a specified frequency, with the input short-circuited to a.c.
5.2.7.3 Reverse transfer capacitance (Cres)：反向传输电容
Typical reverse transfer capacitance as small-signal value, in common-emitter configuration, under specified bias conditions and at a specified frequency.
5.2.8 Gate charge (QG)：门极电荷
Typical value at specified values of gate-emitter voltage, collector-emitter voltage before turn on and collector current after turn-on
5.2.9 Internal gate resistance (rg)：内部门极电阻
Maximum and/or typical value with collector short circuited to emitter in a.c. at the specified values of gate -emitter voltage, collector -emitter voltage and frequency
5.2.10 Turn-on energy (Eon)：开通损耗
Maximum value per pulse under the following specified conditions:
• collector-emitter voltage before turn-on;
• collector current after turn-on;
• load conditions;
• gate-emitter voltage;
• resistance in the gate-emitter circuit;
• case or ambient temperature or virtual junction temperature
5.2.11 Turn-off energy (Eoff)：关断损耗
Maximum value per pulse under the following specified conditions:
• collector current before turn-off;
• collector-emitter voltage after turn-off;
• load conditions;
• gate-emitter voltage;
• resistance in the gate-emitter circuit;
• case or ambient temperature or virtual junction temperature
5.2.12 Switching times：开关时间
5.2.12.1 Turn-on delay time (td(on)) and rise time (tr)：开通延迟时间及上升时间
Maximum values under the following specified conditions:
• collector-emitter voltage before turn-on;
• collector current after turn-on,
• load conditions;
• gate-emitter voltage;
• resistance in the gate-emitter circuit
5.2.12.2 Turn-off delay time (td(off)), faIl time (tf) and tail time (tz)：关断延迟时间，下降时间及拖尾时间
Maximum values with a free-wheeling diode connected under the following specified conditions
• collector-emitter voltage after turn-off;
• collector current before turn-off;
• load conditions;
• gate-emitter voltage;
• resistance in the gate-emitter circuit
5.2.13 Thermal resistance junction to case (Rth(j-c))：结到壳热阻
Maximum value for case-rated IGBTs
5.2.14 Thermal resistance junction to ambient (Rth(j-a))：接到环境热阻
Maximum value for ambient-rated IGBTs
5.2.15 Transient thermal impedance junction to case (Zth(j-c))：结到壳瞬态热阻抗
For case-rated IGBTs, diagram showing the maximum values against the time elapsed after a step change in power dissipation, or analytical elements.
5.2.16 Transient thermal impedance junction to ambient (Zth(j-a))：结到环境瞬态热阻抗
For ambient-rated IGBTs, diagram showing the maximum values against the time elapsed after a step change in power dissipation.