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IGBT参数测试IEC标准四-安全工作区

6.2.5 IGBT Maximum reverse biased safe operating area (RBSOA) IGBT最大反偏安全工作区
6.2.5.1 目的
To verify that the IGBT operates reliably without failure in RBSOA
6.2.5.2 测试电路及波形 (see Figure 5 and Figure 6)
Test circuit of reverse safe operating area (RBSOA)
Figure 5 – Test circuit of reverse safe operating area (RBSOA)
Waveforms of gate-emitter voltage VGE and collector current IC during turn-off
Figure 6 – Waveforms of gate-emitter voltage VGE and collector current IC during turn-off
6.2.5.3 电路描述及要求
The value of load inductance L shall be high enough to maintain the specified IC and VCE (clamp) to the IGBT for least the whole duration of the fall and tail time. VCC is a low voltage to supply the on-state collector current IC. VCE(clamp) must be capable of carrying a reverse current equal to IC, while maintaining the specified voltage. Alternatively, a single voltage source capable of supplying the special IC at the specified VCE and with diode D in parallel with inductor L may be used. R1 and R2 are circuit protection resistors. Ls is an inductor representing the IGBT Maximum permitted unclamped stray inductance.文章来源:http://www.igbt8.com/jc/167.html
6.2.5.4 测试流程
DUT is turned off at specified IC.
VCE and IC are monitored. The DUT has to turn off IC and withstand VCE = VCE(clamp).
NOTE Collector-emitter peak voltage VCEM < V(BR)CE*.
6.2.5.5 规定条件
– Collector current IC:集电极电流IC
– Gate emitter voltage VGE1 and VGE2:门极-发射极电压VGE1及VGE2
– Collector-emitter voltage VCE(clamp):集电极-发射极电压VCE(clamp)
– Single-pulse or repetition rate:单个脉冲或者重复率
– Inductance L:电感L
– Value of unclamped stray inductance Ls:未钳位的杂散电感Ls
– Ambient or case or virtual junction temperature Ta or Tc or Tvj:环境温度、壳温、结温。
– Gate resistor R1, R2:门极电阻R1,R2
6.2.6 IGBT Maximum short-circuit safe operating area (SCSOA) 短路安全工作区
6.2.6.1 目的
To verify that the IGBT operates reliably without failure during a load short-circuit condition.
Two types of load short circuit can occur. The first one is to switch the IGBT on to an existing load short circuit. Another one is when the IGBT is already in the on-state VCE = VCEsat, and then the load short circuit occurs. Both methods must be applied.转载请注明出处:http://www.igbt8.com/
6.2.6.2 IGBT最大短路安全工作区 1 (SCSOA1)
6.2.6.2.1 测试电路及波形 (see Figure 7 and Figure 8)
Circuit for testing safe operating pulse width at load short circuit (SCSOA1)
Figure 7 – Circuit for testing safe operating pulse width at load short circuit (SCSOA1)
Waveforms of gate-emitter voltage VGE, collector current IC and voltage VCE during load short-circuit condition SCSOA1
Figure 8 – Waveforms of gate-emitter voltage VGE, collector current IC and voltage VCE during load short-circuit condition SCSOA1
6.2.6.2.2 电路描述
Ls represents the IGBT Maximum permitted stray inductance, it must be low enough to ensure that IGBT Maximum short-circuit current is reached within the first 25 % of the gate pulse width tpsc.
6.2.6.2.3 测试流程
Set the temperature to the specified value. Apply the specified off-state gate-emitter voltage. Set the collector-emitter voltage to the specified value. Apply the specified gate-emitter on state pulse. IC, VCE and VGE are monitored in order to see whether the IGBT turns on and off correctly.
6.2.6.2.4 规定条件
– Collector-emitter voltage VCE = VCC 集电极-发射极电压VCE = VCC
– On and off-state gate-emitter voltage VGE 开通及关断门极-发射极电压VGE
– Gate pulse width tpsc 门极脉冲宽度
– Gate resistors R1, R2 门极电阻R1,R2
– Value of stray inductance Ls 寄生电感值Ls
– Ambient or case or virtual junction temperature Ta or Tc or Tvj环境温度、壳温、结温。
6.2.6.3 IGBT最大短路安全工作区 2 (SCSOA2)
6.2.6.3.1 运行特点
The gate voltage increases from the gate-emitter voltage VGE by the dvCE/dt of the collector-emitter voltage VCE. It induces the fast increase of the collector current and high peak energy, as shown in Figure 10.
6.2.6.3.2 测试电路及工作波形 (see Figure 9 and Figure 10)
Short-circuit safe operating area 2 (SCSOA2)
Figure 9 – Short-circuit safe operating area 2 (SCSOA2)
Waveforms during SCSOA2
Figure 10 – Waveforms during SCSOA2
6.2.6.3.3 电路描述
Ls is an inductor representing the IGBT Maximum permitted unclamped stray inductance. Switch S in the circuit should have much lower impedance compared to the device under test (DUT). The type name or characteristics of switch S should be specified.
6.2.6.3.4 测试流程
Set the temperature to the specified value. Apply the specified off-state gate-emitter voltage. Set the collector-emitter voltage to the specified value. Apply the specified gate-emitter on-state pulse. The current capability of switch S should be substantially larger than the expected short-circuit current of the DUT. IC, VCE, VGE and the switching signal of the switch S are monitored in order to see whether the IGBT turns on and off correctly.
6.2.6.3.5 规定条件
– Collector current prior to short circuit IC (= Vcc / R1) 短路前集电极电流IC(= VCC/R1)
– Collector-emitter voltage VCE ≈ VCC 集电极-发射极电压VCE ≈ VCC
– On and off-state gate-emitter voltage VGE 开通及关断门极-发射极电压
– Gate pulse width tpsc 脉冲宽度
– Gate resistors R2, R3 门极电阻R2,R3
– Value of unclamped stray inductance Ls 未钳位杂散电感Ls
– Type name or characteristics of switch S, if restrictive 开关S的类型或特性,如有限定
– Ambient or case or virtual junction temperature Ta or Tc or Tvj环境温度、壳温、结温。
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