英飞凌EconoDual系列IGBT模块产品介绍(4)

600V IGBT3 behavior

􀂄 600V IGBT³

􀂄 Trench cell

􀂄 field-stopconcept

􀂄 Sophisticated70μm waferhandlingfrontendprocessing

􀂄 Dramatically reducedon-statelosses

􀂄 Outstanding temperaturerobustness

􀂄 Improved switchingsoftnessand EMC behaviorwithunchangedlow switching losses

􀂄 High short circuitrobustness

􀂄 Specified5 μs shortcircuittime as best compromiseformaximum device prformance

􀂄 Reduced losses, increasedoutputpower and highertemperature range in application
600V IGBT3关断特性：
Turn-off: Trench-Fieldstop-IGBT3 & NPT-IGBT：

􀂃 dI/dt reduced by25%.

􀂃 Overvoltages reducedby25% ⇒ softer switching

􀂃 shorter tailcurrent

􀂃 Turn-off losses at thesamelevel!
600V IGBT3 短路特性：

• Short circuitrobust celldesign

• Current approx. 5 x In

• Specificationlimit:

5 μs short circuittime@ Vge = 15 V, Tj= 150 °C

• Tj max withina sc-pulseis450 °C!

• Failure mode: Over heating and thermal run-away (after turn-off) due to ennergy dissipation during the pulse

• Trade-off between sc-time and electrical device performance!