英飞凌推出的第三代6.5kV IHV IGBT模块现在提供250A至750A的电流范围，并采用最新的沟槽栅/场终止IGBT和发射极控制二极管技术。
This 3rd generation 6.5kV IGBT and diode modules provide a wide product portfolio including single switches, chopper and dual diode modules.
The modules are available in the current range from 250A up to 750A, featuring the latest trench field stop IGBT and emitter controlled diode technology.
Infineons IGBT trench gate structure has significantly improved the performance of the IGBT in terms of the conduction losses. In combination with the optimized switching characteristics this feature allows our customers to set new standards in high performance applications. As an additional customer benefit this new chip set offers a 25% higher current density in the high voltage package IHV standardized by Infineon.
Our 6.5kV modules are available in a highly insulated housing, offering 10.2kV isolation capability, corresponding creepage and clearance distances as requested by the harsh environments of traction applications. They are optimized for application needs, which results in energy efficiency.
Features:
-
6,5kV trench plus Field stop IGBT and Field stop diode chips precisely developed with the focus on traction applications demanding high current capability and optimized switching losses
-
Allows energy efficient operation
-
The highly insulated 6.5kV package offers 10.2kV isolation capability and corresponding creepage and clearance distance
-
High reliability and robust module construction
-
High power density for compact converter design
-
AlSiC base plate for highest reliability and high power cycling capability
-
Minimum storage temperature -55°C and minimum operating temperature -50°C
