4.1
IGBT驱动门极电阻RG的变化对
IGBT模块开通过程的影响
如图33、34、35所示,
IGBT开通时,门极电阻增加将会带来以下影响:
-
开通延迟时间td
-
减小di/dt
-
减小dv/dt
-
增加了门极电压达到常规开通值的时间
-
减小了二极管反向恢复峰值电流Irr
开通损耗作为RG的函数对其的依赖性相对较高。可以从Chart 2的模块手册相关曲线图得到相同的结论。转载请注明出处
http://www.igbt8.com
Chart 5 summarizes the results as function of the gate resistor RG.
Max(C2): 26.25, Max(C3): 203A, Max(C4): 383V
Figure 33: IGBT turn-on with RG = 1.8Ω
Max(C2): 20.00V, Max(C3): 177A, Max(C4): 379V
Figure 34: IGBT turn-on with RG = 3.3Ω
Max(C2): 15.00V, Max(C3): 154A, Max(C4): 379V
Figure 35: IGBT turn-on with RG = 6.8Ω
Chart 5: td, Irr, dv/dt, and di/dv vs. RG (referenced to RG = 1.8Ω)
作者:Jackie Zhao