4.2
IGBT驱动栅射电容CGE的变化对
IGBT模块开通过程的影响
如图36、37、38所示,
IGBT开通时,栅极-发射极电容增加将会带来以下影响:
开通延迟时间td
减小di/dt
减小dv/dt
减小总的震荡
减小了二极管反向恢复峰值电流Irr
Chart 6 summarizes the results as function of the gate-emitter capacitor CGE. The reference here is the measurement from Figure 36.转载请注明出处
http://www.igbt8.com
Max(C2): 24.58V, Max(C3): 194A, Max(C4): 379V
Figure 36: IGBT turn-on with RG = 1.8Ω and CGE = 10nF
Max(C2): 15.00V, Max(C3): 150A, Max(C4): 383V
Figure 37: IGBT turn-on with RG = 1.8Ω and CGE = 56nF
Max(C2): 11.67V, Max(C3): 115A, Max(C4): 379V
Figure 38: IGBT turn-on with RG = 1.8Ω and CGE = 100nF
Chart 6: td, Irr, dv/dt, and di/dv vs. CGE (referenced to RG = 1.8Ω and no CGE applied)
作者:Jackie Zhao