The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
英飞凌K40H1203 / IKW40N120H3是英飞凌第三代1200V高开关速度IGBT单管, 能够完美替代K40T120 / K40T1202 ,专用于焊接、太阳能发电逆变器和UPS等IGBT高频应用领域。
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Low switching losses for high efficiency
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Fast switching behaviour with low EMI emissions
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Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
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Short circuit capability
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Excellent performance
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Low switching and conduction losses
K40H1203 / IKW40N120H3 特点:
•最高结温度为175℃
•非常低VCEsat
•低开关损耗
•较高的开关坚韧性
•内置快速恢复反并联二极管
•根据JEDEC1合格为目标
•无铅引脚电镀符合RoHS标准
应用范围:
•UPS(不中断电源/不间断电源)
•焊接器
•太阳能发电用逆变器
IKW40N120H3 产品信息:
集电极直流电流: 40A
集电极发射饱和电压, Vce: 2.4V
晶体管封装类型: TO-247
功耗 Pd: 483W
产品范围: -
针脚数: 3引脚
工作温度最高值: 175°C
集电极发射电压, Vceo: 1.2kV
原产地: Philippines
进行最后一道重要生产流程所在的国家
RoHS 合规: 是
税则号: 85412900
重量(千克): .00542