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英飞凌1200V PIM FP15R12W1T4_B11

英飞凌EasyPIM™ 1B 1200V PIM IGBT模块with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology。
FP15R12W1T4_B11技术指标信息：
IGBT, 逆变器 / IGBT,Inverter
最大额定值 / Maximum Rated Values

集电极－发射极电压
Collector-emitter voltage		  
Tvj = 25°C		  
VCES        		  
1200           		  
V
连续集电极直流电流
Continuous DC collector current		 TC = 100°C,  Tvj max  = 175°C TC = 25°C, Tvj max  = 175°C IC nom
IC        		 15
28             		 A A
集电极重复峰值电流
Repetitive peak collector current		  
tP  = 1 ms		  
ICRM         		  
30             		  
A
总功率损耗
Total power dissipation		  
TC = 25°C, Tvj max  = 175°C		  
Ptot       		  
130            		  
W
栅极－发射极峰值电压 Gate-emitter peak voltage  
 		  
VGES        		  
+/-20          		  
V
特征值 / Characteristic  Values                                                                                                                           min.     typ.     max.
集电极－发射极饱和电压
Collector-emitter saturation voltage		 IC = 15 A, VGE = 15 V                             Tvj = 25°C  IC  = 15 A, VGE = 15 V                           Tvj = 125°C IC = 15 A, VGE =15V                               Tvj = 150°C  
VCE sat		   1,85
2,15
2,25		 2,25 V V V
栅极阈值电压
Gate threshold voltage		  
IC = 0,48 mA, VCE = VGE, Tvj = 25°C		  
VGEth		  
5,2		  
5,8		  
6,4		  
V
栅极电荷 Gate charge  
VGE = -15 V ... +15 V		  
QG		  
 		  
0,12		  
 		  
µC
内部栅极电阻
Internal gate resistor		  
Tvj = 25°C		  
RGint		  
 		  
0,0		  
 		  
输入电容
Input capacitance		  
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V		  
Cies		  
 		  
0,89		  
 		  
nF
反向传输电容
Reverse transfer capacitance		  
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V		  
Cres		  
 		  
0,03		  
 		  
nF
集电极-发射极截止电流 Collector-emitter cut-off current  
VCE = 1200 V, VGE = 0 V, Tvj = 25°C		  
ICES		  
 		  
 		  
1,0		  
mA
栅极-发射极漏电流
Gate-emitter leakage current		  
VCE = 0 V, VGE = 20 V, Tvj = 25°C		  
IGES		  
 		  
 		  
400		  
nA
开通延迟时间(电感负载)
Turn-on delay time, inductive load		 IC = 15 A, VCE = 600 V                             Tvj = 25°C VGE = ±15 V                                               Tvj = 125°C RGon  = 39                                                 Tvj = 150°C  
td on		  
 		 0,055
0,055
0,055		  
 		 µs
µs
µs
上升时间(电感负载)
Rise time, inductive load		 IC = 15 A, VCE = 600 V                               Tvj = 25°C VGE = ±15 V                                                Tvj = 125°C RGon  = 39                                                  Tvj = 150°C  
tr		  
 		 0,059
0,065
0,065		  
 		 µs
µs
µs
关断延迟时间(电感负载)
Turn-off delay time, inductive load		 IC = 15 A, VCE = 600 V                               Tvj = 25°C VGE = ±15 V                                                Tvj = 125°C RGoff = 39                                                   Tvj = 150°C  
td off		  
 		 0,195
0,275
0,28		  
 		 µs
µs
µs
下降时间(电感负载)
Fall time, inductive load		 IC = 15 A, VCE = 600 V                                Tvj = 25°C VGE = ±15 V                                                Tvj = 125°C RGoff = 39                                                   Tvj = 150°C  
tf		  
 		 0,145
0,19
0,215		  
 		 µs
µs
µs
开通损耗能量 (每脉冲)
Turn-on energy loss per pulse		 IC = 15 A, VCE = 600 V, LS = 50 nH         Tvj = 25°C VGE = ±15 V, di/dt = 550 A/µs (Tvj = 150°C)    Tvj = 125°C RGon  = 39                                     Tvj = 150°C  
Eon		  
 		 1,30
1,75
1,95		  
 		 mJ mJ mJ
关断损耗能量 (每脉冲）
Turn-off energy loss per pulse		 IC = 15 A, VCE = 600 V, LS = 50 nH         Tvj = 25°C VGE = ±15 V, du/dt = 3500 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 39                                                       Tvj = 150°C  
Eoff		  
 		 0,83
1,20
1,35		  
 		 mJ mJ mJ
短路数据 SC data VGE       15 V, VCC = 800 V
VCEmax  = VCES  -LsCE  ·di/dt          tP ≤10 µs,  Tvj = 150°C		  
ISC		  
 		  
55		  
 		  
A
结－外壳热阻
Thermal resistance, junction to case		 每个 IGBT / per IGBT  
RthJC		  
 		  
1,05		  
1,15		  
K/W
外壳－散热器热阻
Thermal resistance, case to heatsink		 每个 IGBT / per IGBT
Paste = 1 W/(m·K)  /     grease = 1 W/(m·K)		  
RthCH		  
 		  
1,05		    
K/W
在开关状态下温度
Temperature under switching conditions		  
 		  
Tvj op		  
-40		  
 		  
150		  
°C
 二极管,逆变器 / Diode, Inverter
最大额定值 / Maximum Rated Values

反向重复峰值电压
Repetitive peak reverse voltage		  
Tvj = 25°C		  
VRRM       		  
1200           		  
V
连续正向直流电流
Continuous DC forward current		  
 		  
IF         		  
15             		  
A
正向重复峰值电流
Repetitive peak forward current		  
tP  = 1 ms		  
IFRM         		  
30             		  
A
I2t-值
I²t - value		 VR = 0 V, tP  = 10 ms, Tvj = 125°C VR = 0 V, tP  = 10 ms, Tvj = 150°C  
I²t      		 16,0
14,0           		 A²s
A²s
特征值 / Characteristic  Values                                                                                                                           min.     typ.     max.
正向电压 Forward voltage IF = 15 A, VGE = 0 V                                    Tvj = 25°C
IF = 15 A, VGE = 0 V                                   Tvj = 125°C IF = 15 A, VGE = 0 V                                   Tvj = 150°C		  
VF		   2,00
2,10
2,10		 2,65 V V V
反向恢复峰值电流
Peak reverse recovery current		 IF = 15 A, - diF/dt = 550 A/µs (Tvj=150°C)Tvj = 25°C VR = 600 V                                                 Tvj = 125°C VGE = -15 V                                                Tvj = 150°C  
IRM		  
 		 13,0
12,0
12,0		  
 		 A A A
恢复电荷 Recovered charge IF = 15 A, - diF/dt = 550 A/µs (Tvj=150°C)Tvj = 25°C VR = 600 V                                                Tvj = 125°C VGE = -15 V                                                Tvj = 150°C  
Qr		  
 		 1,20
2,05
2,40		  
 		 µC
µC
µC
反向恢复损耗（每脉冲） Reverse recovery energy IF = 15 A, - diF/dt = 550 A/µs (Tvj=150°C)Tvj = 25°C VR = 600 V                                                 Tvj = 125°C VGE = -15 V                                                Tvj = 150°C  
Erec		  
 		 0,37
0,68
0,80		  
 		 mJ mJ mJ
结－外壳热阻
Thermal resistance, junction to case		 每个二极管 / per diode  
RthJC		  
 		  
1,75		  
1,90		  
K/W
外壳－散热器热阻
Thermal resistance, case to heatsink		 每个二极管 / per diode
Paste = 1 W/(m·K)  /     grease = 1 W/(m·K)		  
RthCH		  
 		  
1,30		    
K/W
在开关状态下温度
Temperature under switching conditions		  
 		  
Tvj op		  
-40		  
 		  
150		  
°C
二极管,整流器 / Diode, Rectifier
最大额定值 / Maximum Rated Values
反向重复峰值电压
Repetitive peak reverse voltage		  
Tvj = 25°C		  
VRRM       		  
1600           		  
V
最大正向均方根电流(每芯片)
Maximum RMS forward current per chip		  
TC = 80°C		  
IFRMSM      		  
30             		  
A
最大整流器输出均方根电流
Maximum RMS current at rectifier output		  
TC = 80°C		  
IRMSM       		  
30             		  
A
正向浪涌电流
Surge forward current		 tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C		  
IFSM         		 300
245            		 A A
I2t-值
I²t - value		 tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C		  
I²t      		 450
300            		 A²s
A²s
特征值 / Characteristic  Values                                                                                                                           min.     typ.     max.
正向电压 Forward voltage  
Tvj = 150°C,  IF = 15 A		  
VF		  
 		  
0,85		  
 		  
V
反向电流 Reverse current  
Tvj = 150°C,  VR = 1600 V		  
IR		  
 		  
1,00		  
 		  
mA
结－外壳热阻
Thermal resistance, junction to case		 每个二极管 / per diode  
RthJC		  
 		  
1,20		  
1,35		  
K/W
外壳－散热器热阻
Thermal resistance, case to heatsink		 每个二极管 / per diode
Paste = 1 W/(m·K)  /     grease = 1 W/(m·K)		  
RthCH		  
 		  
1,15		    
K/W
在开关状态下温度
Temperature under switching conditions		  
 		  
Tvj op		  
-40		  
 		  
150		  
°C
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