英飞凌1200V PIM FP15R12W1T4_B11(2)

IGBT, 制动-斩波器 / IGBT, Brake-Chopper
最大额定值 / Maximum Rated Values

集电极－发射极电压 Collector-emitter voltage	Tvj = 25°C	VCES	1200	V
连续集电极直流电流 Continuous DC collector current	TC = 100°C,  Tvj max  = 175°C TC = 25°C, Tvj max  = 175°C	IC nom IC	15 28	A A
集电极重复峰值电流 Repetitive peak collector current	tP  = 1 ms	ICRM	30	A
总功率损耗 Total power dissipation	TC = 25°C, Tvj max  = 175°C	Ptot	130	W
栅极－发射极峰值电压 Gate-emitter peak voltage		VGES	+/-20	V

特征值 / Characteristic  Values                                                                                                                           min.     typ.     max.

集电极－发射极饱和电压 Collector-emitter saturation voltage	IC = 15 A, VGE = 15 V                                     Tvj = 25°C IC  = 15 A, VGE = 15 V                                       Tvj = 125°C IC = 15 A, VGE = 15 V                                     Tvj = 150°C	VCE sat		1,85 2,15 2,25	2,25	V V V
栅极阈值电压 Gate threshold voltage	IC = 0,48 mA, VCE = VGE, Tvj = 25°C	VGEth	5,2	5,8	6,4	V
栅极电荷 Gate charge	VGE = -15 V ... +15 V	QG		0,12		µC
内部栅极电阻 Internal gate resistor	Tvj = 25°C	RGint		0,0
输入电容 Input capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V	Cies		0,89		nF
反向传输电容 Reverse transfer capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V	Cres		0,03		nF
集电极-发射极截止电流 Collector-emitter cut-off current	VCE = 1200 V, VGE = 0 V, Tvj = 25°C	ICES			1,0	mA
栅极-发射极漏电流 Gate-emitter leakage current	VCE = 0 V, VGE = 20 V, Tvj = 25°C	IGES			400	nA
开通延迟时间(电感负载) Turn-on delay time, inductive load	IC = 15 A, VCE = 600 V                                Tvj = 25°C VGE = ±15 V                                                Tvj = 125°C RGon  = 43                                                  Tvj = 150°C	td on		0,065 0,065 0,065		µs µs µs
上升时间(电感负载) Rise time, inductive load	IC = 15 A, VCE = 600 V                               Tvj = 25°C VGE = ±15 V                                                Tvj = 125°C RGon  = 43                                                  Tvj = 150°C	tr		0,06 0,065 0,065		µs µs µs
关断延迟时间(电感负载) Turn-off delay time, inductive load	IC = 15 A, VCE = 600 V                                Tvj = 25°C VGE = ±15 V                                                Tvj = 125°C RGoff = 43                                                   Tvj = 150°C	td off		0,21 0,28 0,285		µs µs µs
下降时间(电感负载) Fall time, inductive load	IC = 15 A, VCE = 600 V                               Tvj = 25°C VGE = ±15 V                                               Tvj = 125°C RGoff = 43                                                   Tvj = 150°C	tf		0,17 0,20 0,225		µs µs µs
开通损耗能量 (每脉冲) Turn-on energy loss per pulse	IC = 15 A, VCE = 600 V, LS = 50 nH         Tvj = 25°C VGE = ±15 V                                               Tvj = 125°C RGon  = 43                                                  Tvj = 150°C	Eon		1,35 1,80 2,00		mJ mJ mJ
关断损耗能量 (每脉冲） Turn-off energy loss per pulse	IC = 15 A, VCE = 600 V, LS = 50 nH         Tvj = 25°C VGE = ±15 V                                               Tvj = 125°C RGoff = 43                                                   Tvj = 150°C	Eoff		0,85 1,20 1,35		mJ mJ mJ
短路数据 SC data	VGE       15 V, VCC = 800 V VCEmax  = VCES  -LsCE  ·di/dt          tP≤10 µs,  Tvj = 150°C	ISC		55		A
结－外壳热阻 Thermal resistance, junction to case	每个 IGBT / per IGBT	RthJC		1,05	1,15	K/W
外壳－散热器热阻 Thermal resistance, case to heatsink	每个 IGBT / per IGBT Paste = 1 W/(m·K)  /     grease = 1 W/(m·K)	RthCH		1,05		K/W
在开关状态下温度 Temperature under switching conditions		Tvj op	-40		150	°C

二极管，制动-斩波器  / Diode, Brake-Chopper
最大额定值 / Maximum Rated Values

反向重复峰值电压 Repetitive peak reverse voltage	Tvj = 25°C	VRRM	1200	V
连续正向直流电流 Continuous DC forward current		IF	10	A
正向重复峰值电流 Repetitive peak forward current	tP  = 1 ms	IFRM	20	A
I2t-值 I²t - value	VR = 0 V, tP  = 10 ms, Tvj = 125°C	I²t	16,0	A²s

特征值 / Characteristic  Values                                                                                                                           min.     typ.     max.
负温度系数热敏电阻 / NTC-Thermistor
特征值 / Characteristic  Values

额定电阻值 Rated resistance	TC = 25°C	R25		5,00		k
R100  偏差 Deviation of R100	TC = 100°C,  R100  = 493	R/R	-5		5	%
耗散功率 Power dissipation	TC = 25°C	P25			20,0	mW
B-值 B-value	R2  = R25  exp [B25/50(1/T2  - 1/(298,15 K))]	B25/50		3375		K
B-值 B-value	R2  = R25  exp [B25/80(1/T2  - 1/(298,15 K))]	B25/80		3411		K
B-值 B-value	R2  = R25  exp [B25/100(1/T2  - 1/(298,15 K))]	B25/100		3433		K

模块 / Module

绝缘测试电压 Isolation test voltage   RMS, f = 50 Hz, t = 1 min   VISOL          2,5               kV 内部绝缘 Internal isolation 基本绝缘  (class 1, IEC 61140) basic insulation (class 1, IEC 61140)              AI203                       爬电距离 Creepage distance 端子- 散热片 / terminal to heatsink 端子- 端子 / terminal to terminal            11,5 6,3               mm 电气间隙 Clearance 端子- 散热片 / terminal to heatsink 端子- 端子 / terminal to terminal            10,0 5,0               mm 相对电痕指数 Comperative tracking index       CTI         > 200

杂散电感,模块 Stray inductance module		LsCE		30		nH
模块引线电阻,端子-芯片 Module lead resistance, terminals - chip	TC = 25°C, 每个开关 / per switch	RCC'+EE' RAA'+CC'		8,00 6,00		m
最大结温 Maximum junction temperature	逆变器,制动-斩波器 / inverter, brake-chopper 整流器 / rectifier	Tvj max			175 150	°C °C
在开关状态下温度 Temperature under switching conditions	逆变器,制动-斩波器 / inverter, brake-chopper 整流器 / rectifier	Tvj op	-40 -40		150 150	°C °C
储存温度 Storage temperature		Tstg	-40		125	°C
Anpresskraft für mech.  Bef. pro Feder mountig force per clamp		F	20	-	50	N
重量 Weight		G		24		g

The current  under  continuous operation is limited to 25A rms per connector pin.