GeneSiC碳化硅SiC功率器件(2)

SiC肖特基整流管：

• 工作温度范围高达225 oC
• 业内最小的零偏压电容和反向恢复充电器件
• Vf 的正温度系数，易于并联使用
• 温度独立的超快开关瞬态
•  提升电路效率
• 业内领先的正常工作温度范围内反向漏电流指标

• 额定电流范围1 A~ 20 A
• 额定电压1200 V, 1800 V 和 2000 V
• 业内标准封装形式 – TO-220, TO-247, TO-263 和 SOT-89
• RoHS 认证

1200 V SiC 功率肖特基二极管产品电性能：

• GeneSiC Diodes are designed to operate at High temperatures (= 225 oC) and exhibit Low On State Voltages, thereby resulting in Low Conduction Losses
• Implementation of Optimized Device Design and Robust Processing Techniques allow GeneSiC Diodes to deliver Superior Surge Current Capability with Temperature Independent Barrier Heights and Ideality Factors

• GeneSiC 1200 V Diodes are designed to deliver Best-in-Class Blocking Performance with leakage current densities less than 1 mA/cm2 even at 225 oC operating temperatures
• GeneSiC diodes display smallest increase in the leakage current as the temperature is increased from 25 oC to 225 oC
• The Blocking Performance is solely limited by Avalanche Breakdown

• GeneSiC Diodes offer Lowest Reverse Recovery Charge, QC and Lowest Figure of Merit, Q C/IF for any current rating
• Moreover, Q C is independent of applied dI/dt, I F and Temperature
• Lower ‘Q C’ values will drastically reduce the switching losses in the inverter and converter applications

Genesic肖特基二极管卓越的浪涌电流能力： 1200 V SBR - C-V 特性：
•GeneSiC features the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions转载请注明出处 http://www.igbt8.com