GeneSiC碳化硅SiC功率器件(4)

SiC 超结晶体管 (SJT)：

•特性/好处

超高电流增益 BJT
栅氧自由切换
常关型，准多数载流子器件技术
业内最低 VDS(ON)
工作温度范围到 250 oC
Vf 的正温度系数，易于并联使用
温度独立的超快开关瞬态
广阔RBSOA 能力

•应用

天和国防、井下石油钻井, 地热测试设备、混合电动车辆、太阳能逆变器、开关电源、功率因数校正、UPS 和电机驱动。
SiC SJT 产品：

•SiC SJTs

导通电阻 250 mΩ
额定电压 1200 V
业内标准封装 – TO-220
RoHS 认证

1200 V SiC SJT 静态特性;

•Output Characteristics

GeneSiC SiC Switch, SJT offers High Operational (pulsed) Current Gain of 88 at 25 oC
SJT delivers Low Conduction Losses than any other SiC Switch
Display positive temperature coefficient of On-resistance
Suitable for connecting an anti-parallel diode转载请注明出处 http://www.igbt8.com

•Blocking Characteristics

GeneSiC SJTs offer Superior Blocking Performance with leakage current density less than 1 mA/cm2 even at 250 oC Operating Temperature
The Gradient of Leakage Current with respect to Operating Temperature is Very Low
Optimized Edge Termination and Surface Passivation schemes allow GeneSiC SJTs to deliver Near Theoretical Blocking Voltages

•Temperature Independent Ultra Low Switching Energies ( μJ range) and Low Conduction Losses of GeneSiC SJT make it an Ideal Switch for High Temperature, High Frequency Power Electronic Applications.

GeneSiC Si产品：

•高质量

•获得RoHs 认证 and UL 认证

•某些产品在175 oC 温度下非常坚固

•我们的正向压降比市场上所有其它产品要好 (可设计用于运行冷却器).

•我们的竞争对手除了走捷径，已经没有投资于这个产品系列

•我们有新的和专利产品，超过所有其他人的产品系列

•价格比竞争对手低18%左右
结论：

•GeneSiC successes are due to our exceptionally talented Engineers. We are continually striving to promote innovation in our Silicon products while innovating high power semiconductor Silicon Carbide devices

•We Provide beginning for Input, Control, Switching, and Output stages for our Customer Designs

•Our Goal is to break down road blocks that engineers have, by making products that create less heat and robust efficiencies

高质量元件-竞争力的价格-难以置信的交货速度转载请注明出处 http://www.igbt8.com

上海菱端电子科技有限公司：

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